Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3000615
Reference24 articles.
1. Electrical and physical properties of HfO2 films prepared by remote plasma oxidation of Hf metal
2. Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering
3. Low temperature nitrogen incorporation method for enhanced electrical properties in hafnia based gate dielectrics
4. Application of HfSiON as a gate dielectric material
5. Nickel-silicide phase effects on flatband voltage shift and equivalent oxide thickness decrease of hafnium silicon oxynitride metal-silicon-oxide capacitors
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