Low temperature nitrogen incorporation method for enhanced electrical properties in hafnia based gate dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2404604
Reference26 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Effects of dielectric structure of HfO2 on carrier generation rate in Si substrate and channel mobility
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4. Application of HfSiON as a gate dielectric material
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