Effects of dielectric structure of HfO2 on carrier generation rate in Si substrate and channel mobility-Reference-Cited by-同舟云学术

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Effects of dielectric structure of HfO2 on carrier generation rate in Si substrate and channel mobility

Published:2004-03-22 Issue:12 Volume:84 Page:2148-2150
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kang Chang Yong,Cho Hag-Ju,Choi Rino,Kang Chang Seok,Kim Young Hee,Rhee Se Jong,Choi Chang Hwan,Akbar Shahriar M.,Lee Jack C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1689744

Reference9 articles.

1. Structural and electrical properties of HfO2 with top nitrogen incorporated layer

2. Controlled nitrogen incorporation at the gate oxide surface

3. A graphical method to determine the generation parameters from pulsed MIS capacitors

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Film Stress Modulation Using TiN Metal Gate on Stress Engineering and Its Impact on Device Characteristics in Metal Gate/High-$k$ Dielectric SOI FinFETs;IEEE Electron Device Letters;2008-05

2. Effects of surface treatments using O3 and NH3 on electrical properties and chemical structures of high-k HfO2 dielectric films on strained Si1−xGex∕Si substrates;Journal of Applied Physics;2008-04-15

3. Direct observation of two-dimensional growth at SiO2/Si(111) interface;Thin Solid Films;2007-07

4. Low temperature nitrogen incorporation method for enhanced electrical properties in hafnia based gate dielectrics;Applied Physics Letters;2006-12-11

5. DIELECTRIC CHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR CAPACITOR USING Ga2O3 DIELECTRICS ON p-Si (100);Integrated Ferroelectrics;2005-09

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