DIELECTRIC CHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR CAPACITOR USING Ga2O3 DIELECTRICS ON p-Si (100)-Reference-Cited by-同舟云学术

DIELECTRIC CHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR CAPACITOR USING Ga2O3 DIELECTRICS ON p-Si (100)

Published:2005-09 Issue:1 Volume:74 Page:173-180
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

LEE SANG-A¹,JEONG SE-YOUNG²,HWANG JAE-YEOL³,KIM JONG-PIL³,HA MYONG-GYU³,CHO CHAE-RYONG²³

Affiliation:

1. a Department of Physics , Pusan National University , Busan, 609-735, Korea

2. b School of Nano-Science & Technology, Pusan National University , Busan, 609-735, Korea

3. c Nano-Surface Analysis Team, Korea Basic Science Institute , Busan, 609-735, Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580500414192

Reference16 articles.

1. Electrical conduction mechanisms of metal∕La2O3∕Si structure

2. Turnaround of hysterisis for capacitance–voltage characteristics of hafnium oxynitride dielectrics

3. Interface properties of SiO2/n-GaN metal–insulator–semiconductor structures

4. Work-function difference between Al and n-GaN from Al-gated n-GaN∕nitrided-thin-Ga2O3∕SiO2 metal oxide semiconductor structures

5. Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition

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