Interface properties of SiO2/n-GaN metal–insulator–semiconductor structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1486266
Reference17 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
3. Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor
4. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
5. Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors
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