Study of interface degradation of Hf-silicate gate dielectrics during thermal nitridation process
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Published:2009
Issue:1
Volume:27
Page:71
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ISSN:1071-1023
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Son S. Y.,Jang J. H.,Kumar P.,Singh R. K.,Yuh J. H.,Cho H.,Kang C. J.
Publisher
American Vacuum Society
Subject
Electrical and Electronic Engineering,Condensed Matter Physics