Impact of TSV on TDDB Performance of Neighboring FinFET with HK/IL Gate Stacking
Author:
Affiliation:
1. Team of Design For Reliability Hisilicon,Shanghai,P. R. China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764467.pdf?arnumber=9764467
Reference25 articles.
1. Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high-k/SiO2 gate stacks
2. The influence of mechanical stress on the dielectric breakdown field strength of thin SiO2 films
3. Effect of mechanical stress on reliability of gate-oxide film in MOS transistors
4. The study of compressive and tensile stress on MOSFET's I-V, C-V characteristics and it's impacts on hot carrier injection and negative bias temperature instability
5. Reliability of HfSiON gate dielectric silicon MOS devices under [110] mechanical stress: Time dependent dielectric breakdown
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