Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high-k/SiO2 gate stacks-Reference-Cited by-同舟云学术

Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high-k/SiO2 gate stacks

Published:2008-09 Issue:9 Volume:93 Page:092101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liao J. C.,Fang Y. K.,Hou Y. T.,Hung C. L.,Hsu P. F.,Lin K. C.,Huang K. T.,Lee T. L.,Liang M. S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2967442

Reference14 articles.

1. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

2. Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO/sub 2/ gate stack with low preexisting traps

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