Thermal stability of nitrogen incorporated in HfNxOy gate dielectrics prepared by reactive sputtering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1651652
Reference6 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics
3. Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode
4. Structural and electrical properties of HfO2 with top nitrogen incorporated layer
5. Zirconium nitrides deposited by dual ion beam sputtering: physical properties and growth modelling
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