Optical characterization of AlN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference44 articles.
1. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
2. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
3. Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time
4. AlN/GaN insulated gate heterostructure FET with regrown n+GaN ohmic contact
5. Low interface state density AlN/GaN MISFETs
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2. Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE;Chinese Physics B;2015-12
3. DC and RF Performance of AlN/GaN MOS-HEMTs;IEICE Transactions on Electronics;2011
4. Nanostructuring induced enhancement of radiation hardness in GaN epilayers;Applied Physics Letters;2007-04-16
5. Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire;Semiconductors;2006-09
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