Nanostructuring induced enhancement of radiation hardness in GaN epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2723076
Reference15 articles.
1. 2 MeV proton radiation damage studies of gallium nitride films through low temperature photoluminescence spectroscopy measurements
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4. Study of ion‐implantation damage in GaAs:Be and InP:Be using Raman scattering
5. Characterization of implantation and annealing of Zn‐implanted InP by Raman spectrometry
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