Solution-Processed Rad-Hard Amorphous Metal-Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

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Solution-Processed Rad-Hard Amorphous Metal-Oxide Thin-Film Transistors

Published:2018-10-09 Issue:47 Volume:28 Page:1802717
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Park Byungkyu¹,Ho Dongil¹,Kwon Guhyun¹,Kim Dojeon²,Seo Sung Yong³,Kim Choongik¹,Kim Myung-Gil²^ORCID

Affiliation:

1. Department of Chemical and Biomolecular Engineering; Sogang University; 35 Baekbom-ro Mapo-gu Seoul 04107 South Korea

2. Department of Chemistry; Chung-Ang University; 84 Heukseok-ro Dongjak-gu Seoul 06974 South Korea

3. Department of Chemistry; Pukyong National University; Busan 48513 South Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.201802717/fullpdf

Reference71 articles.

1. The space radiation environment for electronics

2. Introduction to radiation-resistant semiconductor devices and circuits

3. Affiliate Plan of the IEEE Nuclear and Plasma Sciences Society [advertisement]

4. End to the Cosmic-Ray Spectrum?

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