Reaction of Ni film with In0.53Ga0.47As: Phase formation and texture-Reference-Cited by-同舟云学术

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Reaction of Ni film with In0.53Ga0.47As: Phase formation and texture

Published:2016-10-07 Issue:13 Volume:120 Page:135304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhiou Seifeddine¹,Nguyen-Thanh Tra²,Rodriguez Philippe¹^ORCID,Nemouchi Fabrice¹,Rapenne Laetitia³,Blanc Nils²,Boudet Nathalie²,Gergaud Patrice¹

Affiliation:

1. Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

2. Univ. Grenoble Alpes, F-38000 Grenoble, France and Inst. Néel, F-38054 Grenoble, France

3. Univ. Grenoble Alpes, F-38000 Grenoble, France and CNRS, LMGP, F-38000 Grenoble, France

Funder

Agence Nationale de la Recherche (ANR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4963716

Reference28 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Roadmap for 22nm and beyond (Invited Paper)

3. Three dimensional reciprocal space measurement by x-ray diffraction using linear and area detectors: Applications to texture and defects determination in oriented thin films and nanoprecipitates

4. An off-normal fibre-like texture in thin films on single-crystal substrates

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phase decomposition in the Ni–InGaAs system at high annealing temperature;Journal of Materials Science;2023-10

2. Ni(Pt)-based CMOS-compatible contacts on p-InGaAs for III–V photonic devices;Materials Science in Semiconductor Processing;2023-02

3. Development of Ni2P Contact Technology and its integration on III-V materials for 300 mm Si Photonics Platform;IEEE Journal of the Electron Devices Society;2021

4. Nickel-based CMOS-compatible contacts on p-In0.53Ga0.47 As for III-V / silicon hybrid lasers;2020 IEEE International Interconnect Technology Conference (IITC);2020-10-05

5. Development of a CMOS-compatible contact technology for III–V materials and Si photonics;Japanese Journal of Applied Physics;2020-03-30

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