Pulsed radio frequency plasma deposition of a-SiNx:H alloys: Film properties, growth mechanism, and applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2349565
Reference63 articles.
1. Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors—a critical review
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3. Nanolithography using wet etched silicon nitride phase masks
4. Micromachined ultrasonic transducers using silicon nitride membrane fabricated in PECVD technology
5. Tunable Fabry-Pérot cavities fabricated from PECVD silicon nitride employing zinc sulphide as the sacrificial layer
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