Evaluation of Silicon Nitride Film Formed Using Magnetic-Mirror Confined Plasma Source-Reference-Cited by-同舟云学术

Evaluation of Silicon Nitride Film Formed Using Magnetic-Mirror Confined Plasma Source

Published:2019 Issue:8 Volume:8 Page:N113-N118
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Goto Tetsuya^ORCID,Kobayashi Seiji,Yabuta Yuki,Sugawa Shigetoshi

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Yang J.-H. Park J.-E. Lee J.-W. Chu K.-S. Ku J.-H. Park M.-H. Lee N.-In. Kang H.-S. Oh M.-H. Lee J.-H. Kang H.-K. Suh K.-P. , Digest of technical papers 2003 symposium on 2003, pp.55–56.

2. Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration

3. (Invited) Failure Mechanisms in AlGaN/GaN HEMTs Irradiated with 2MeV Protons

4. Detailed study of the composition of hydrogenated SiNx layers for high-quality silicon surface passivation

5. Characterisation and optimisation of PECVD SiNx as an antireflection coating and passivation layer for silicon solar cells

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2. The low-temperature remote-plasma-activated pulsed chemical vapor deposition route to SiNx from 1,3,5-tri(isopropyl)cyclotrisilazane;Thin Solid Films;2020-10

3. Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications;ECS Journal of Solid State Science and Technology;2020-01-08