Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography
Author:
Affiliation:
1. Université Grenoble Alpes, CEA, INAC, F-38000 Grenoble, France
2. Université Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France
3. Université Grenoble Alpes, CNRS, Institut Néel, F-38000 Grenoble, France
Funder
LabEx GANEX
FP7 Ideas: European Research Council
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5125188
Reference34 articles.
1. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
2. Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy
3. Heavy doping effects in Mg-doped GaN
4. Structural Defects and Relation with Optoelectronic Properties in Highly Mg-Doped GaN
5. Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN
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