Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1306421
Reference12 articles.
1. Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
2. Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
3. Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy
4. Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods
5. Inversion of wurtzite GaN(0001) by exposure to magnesium
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