Carrier capture in InGaAsSb∕InAs∕InGaSb type-II laser heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2771037
Reference6 articles.
1. High power and high brightness from an optically pumped InAs/InGaSb type-II midinfrared laser with low confinement
2. Mechanism of the temperature sensitivity of mid-infrared GaSb-based semiconductor lasers
3. Performance comparison of optically pumped type-II midinfrared lasers
4. High power 2.4μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5%
5. High power 2.4μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5%
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