Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots-Reference-Cited by-同舟云学术

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Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots

Published:2013-01-14 Issue:2 Volume:102 Page:023107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sun Meng,Simmonds Paul J.,Babu Laghumavarapu Ramesh,Lin Andrew,Reyner Charles J.,Duan Hsin-Sheng,Liang Baolai,Huffaker Diana L.

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4776221

Reference27 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. Production of Photocurrent due to Intermediate-to-Conduction-Band Transitions: A Demonstration of a Key Operating Principle of the Intermediate-Band Solar Cell

3. Effect of strain compensation on quantum dot enhanced GaAs solar cells

4. General equivalent circuit for intermediate band devices: Potentials, currents and electroluminescence

5. Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures;Optical Materials;2022-12

2. Tensile-strained self-assembly of InGaAs on InAs(111)A;Journal of Vacuum Science & Technology B;2021-12

3. Strain-driven quantum dot self-assembly by molecular beam epitaxy;Journal of Applied Physics;2020-07-21

4. Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy;Nanotechnology;2020-05-14

5. Band alignment and carrier recombination of InAs/GaAs<sub>1−</sub><sub><italic>x</italic></sub>Sb<sub><italic>x</italic></sub> quantum dots affected by Sb content;SCIENTIA SINICA Physica, Mechanica & Astronomica;2018-09-06

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