Evolution of deep centers in GaN grown by hydride vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1338970
Reference14 articles.
1. Thickness Dependence of Electronic Properties of GaN Epi-layers
2. Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
3. Hall-effect analysis of GaN films grown by hydride vapor phase epitaxy
4. Growth of gallium nitride by hydride vapor-phase epitaxy
5. Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition
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