Hall-effect analysis of GaN films grown by hydride vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121017
Reference10 articles.
1. The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates
2. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
3. Emerging gallium nitride based devices
4. Growth of gallium nitride by hydride vapor-phase epitaxy
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