Bandgap, Mobility, Dielectric Constant, and Baliga’s Figure of Merit of 4H-SiC, GaN, and β-Ga<sub>2</sub>O<sub>3</sub> from 300 to 620 K-Reference-Cited by-同舟云学术

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Bandgap, Mobility, Dielectric Constant, and Baliga’s Figure of Merit of 4H-SiC, GaN, and β-Ga₂O₃ from 300 to 620 K

Published:2022-08-04 Issue:8 Volume:4 Page:4140-4145
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Cheng Lu¹,Yang Jia-Yue²^ORCID,Zheng Wei¹^ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China

2. Optics & Thermal Radiation Research Center, Institute of Frontier and Interdisciplinary, Shandong University, Qingdao, Shandong, 266237, China

Funder

Natural Science Foundation of Guangdong Province

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00766

Reference46 articles.

1. Vacuum-Ultraviolet Photovoltaic Detector

2. Vacuum Ultraviolet (120–200 nm) Avalanche Photodetectors

3. Vacuum-ultraviolet photodetectors

4. Ultrafast (600 ps) α-ray scintillators

5. Strong Electron–Phonon Coupling in β-Ga₂O₃: A Huge Broadening of Self-Trapped Exciton Emission and a Significant Red Shift of the Direct Bandgap

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