Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient-Reference-Cited by-同舟云学术

Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient

Published:2010-07-12 Issue:2 Volume:97 Page:022903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xu H. X.,Xu J. P.,Li C. X.,Lai P. T.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3462301

Reference25 articles.

1. HfTiAlO dielectric as an alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

2. Band offsets of wide-band-gap oxides and implications for future electronic devices

3. Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

4. Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric

5. Impact of germanium related defects on electrical performance of hafnium oxide

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