OH-Si complex in hydrogenated n-type β-Ga2O3:Si-Reference-Cited by-同舟云学术

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OH-Si complex in hydrogenated n-type β-Ga2O3:Si

Published:2021-08-09 Issue:6 Volume:119 Page:062109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Venzie Andrew¹,Portoff Amanda¹,Fares Chaker²^ORCID,Stavola Michael¹^ORCID,Fowler W. Beall¹^ORCID,Ren Fan²^ORCID,Pearton Stephen J.³^ORCID

Affiliation:

1. Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015, USA

2. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA

3. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

Funder

Division of Materials Research

Defense Threat Reduction Agency

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0059769

Reference42 articles.

1. State-of-the-art technologies of gallium oxide power devices

2. Guest Editorial: The dawn of gallium oxide microelectronics

3. A review of Ga2O3materials, processing, and devices

4. Recent progress on the electronic structure, defect, and doping properties of Ga2O3

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1. On the nature of as-grown and irradiation-induced Ga vacancy defects in β-Ga2O3;Journal of Applied Physics;2024-08-13

2. Defects and doping in ultra-wide band gap (Al,Ga)N and β-(Al,Ga)2O3 alloys;Journal of Materials Research;2024-08-12

3. Assignments of vibrational lines to OD-impurity complexes for adventitious impurities in β-Ga2O3;APL Materials;2024-07-01

4. O-H centers in β-Ga2O3 with a Ga(1) vacancy at their core;Oxide-based Materials and Devices XV;2024-03-15

5. Split and unrelaxed Ga vacancies in β-Ga2O3;Oxide-based Materials and Devices XV;2024-03-15

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