Surface recombination in doped semiconductors: Effect of light excitation power and of surface passivation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4821139
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1. Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future
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