The effect of Si and Cu on the interactions between Al films and a TiW barrier layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351524
Reference5 articles.
1. Thin film interactions of Al and Al(Cu) on TiW
2. Thin‐film interactions in Si/SiO2/W‐Ti/Al‐1% Si system
3. A review of thin-film aluminide formation
4. Interconnections in VLSI
5. Studies of aluminum-rich alloys with the transition metals manganese and tungsten. I. The crystal structure of ε(W-Al)-WAl4
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1. Characterization of Ti diffusion in PVD deposited WTi/AlCu metallization on monocrystalline Si by means of secondary ion mass spectroscopy;Microelectronics Reliability;2012-09
2. Aluminide formation in polycrystalline Al/W metal/barrier thin-film bilayers: Reaction paths and kinetics;Journal of Applied Physics;1997-07
3. Thermal Stability of W‐Contacted Junction Diodes;Journal of The Electrochemical Society;1996-06-01
4. Interface reaction of Al/W and chemical properties of Al–W bimetallic bonding;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-09
5. Reaction paths and kinetics of aluminide formation in Al/epitaxial‐W(001) model diffusion barrier systems;Journal of Applied Physics;1995-07
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