Interconnections in VLSI
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://physicstoday.scitation.org/doi/pdf/10.1063/1.881069
Reference5 articles.
1. Metallization in microelectronics
2. A 1-µm bipolar VLSI technology
3. Electromigration in thin aluminum films on titanium nitride
4. Layered and Homogeneous Films of Aluminum and Aluminum/Silicon with Titanium and Tungsten for Multilevel Interconnects
5. Reliability Evaluation of Aluminum-Metallized MOS Dynamic RAM's in Plastic Packages in High Humidity and Temperature Environments
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1. Three-dimensional simulation of impurity diffusion in thin-film diffusion barriers;Journal of Electronic Materials;1994-12
2. Interactions between Al-1 wt% Si thin film and W-Ti barrier layer;Journal of Materials Science;1994-05
3. The effect of Si and Cu on the interactions between Al films and a TiW barrier layer;Journal of Applied Physics;1992-10
4. Integrated processing for microelectronics science and technology;IBM Journal of Research and Development;1992-03
5. Industrial Perspective on Reliability of VLSI Devices;MRS Proceedings;1991
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