Mechanisms influencing “hot-wire” deposition of hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365998
Reference12 articles.
1. Deposition of device quality, lowHcontent amorphous silicon
2. A reduction in the Staebler-Wronski effect observed in low H content a-Si:H films deposited by the hot wire technique
3. Deposition of device quality, low H content a-Si:H by the hot wire technique
4. a‐Si : H produced by high‐temperature thermal decomposition of silane
5. Catalytic Chemical Vapor Deposition (CTC-CVD) Method Producing High Quality Hydrogenated Amorphous Silicon
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3. Poly-Si/SiOx/c-Si passivating contact with 738 mV implied open circuit voltage fabricated by hot-wire chemical vapor deposition;Applied Physics Letters;2019-04-15
4. Correlation between in Situ Diagnostics of the Hydrogen Plasma and the Interface Passivation Quality of Hydrogen Plasma Post-Treated a-Si:H in Silicon Heterojunction Solar Cells;ACS Applied Materials & Interfaces;2019-04-05
5. a-Si:H passivation layer growth by HWCVD for Si heterojunction solar cells: Critical dependence on substrate temperature;AIP Conference Proceedings;2018
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