High‐quality amorphous silicon thin films for tunnel oxide passivating contacts deposited at over 150 nm/min-Reference-Cited by-同舟云学术

High‐quality amorphous silicon thin films for tunnel oxide passivating contacts deposited at over 150 nm/min

Published:2020-08-26 Issue:1 Volume:29 Page:16-23
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog Photovolt Res Appl

Author:

Li Shenghao¹²^ORCID,Pomaska Manuel¹^ORCID,Hoß Jan³,Lossen Jan³^ORCID,Qiu Kaifu¹²^ORCID,Hong Ruijiang²,Finger Friedhelm¹,Rau Uwe¹^ORCID,Ding Kaining¹

Affiliation:

1. IEK5‐Photovoltaics Forschungszentrum Jülich Jülich Germany

2. Institute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, School of Physics Sun Yat‐sen University Guangzhou China

3. International Solar Energy Research Center – ISC Konstanz Constance Germany

Funder

Guangzhou Science, Technology and Innovation Commission

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.3333

Reference35 articles.

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3. Building blocks for industrial, screen‐printed double‐side contacted POLO cells with highly transparent ZnO:Al layers;Peibst R;IEEE Journal of Photovoltaics,2018

4. Hydrogenation of Phosphorus-Doped Polycrystalline Silicon Films for Passivating Contact Solar Cells

5. Effect of Crystallographic Orientation and Nanoscale Surface Morphology on Poly-Si/SiOx Contacts for Silicon Solar Cells

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