In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/min-Reference-Cited by-同舟云学术

In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/min

Published:2019-07-30 Issue:33 Volume:11 Page:30493-30499
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Shenghao¹²^ORCID,Pomaska Manuel²,Hoß Jan³,Lossen Jan³,Ziegner Mirko⁴,Hong Ruijiang¹,Finger Friedhelm²,Rau Uwe²,Ding Kaining²

Affiliation:

1. Institute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, School of Physics, Sun Yat-Sen University, 510006 Guangzhou, China

2. IEK-5 Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany

3. International Solar Energy Research Center—ISC Konstanz, 78467 Konstanz, Germany

4. IEK-2 Microstructure and Properties of Materials, Forschungszentrum Jülich, 52425 Jülich, Germany

Funder

Bundesministerium f?r Wirtschaft und Energie

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b10360

Reference43 articles.

1. Surface passivation of crystalline silicon solar cells: Present and future

2. Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells

3. Investigation of MoO x /n-Si strong inversion layer interfaces via dopant-free heterocontact

4. 13.8% Efficiency Hybrid Si/Organic Heterojunction Solar Cells with MoO3Film as Antireflection and Inversion Induced Layer

5. Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells

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