Investigation of MoO x /n-Si strong inversion layer interfaces via dopant-free heterocontact-Reference-Cited by-同舟云学术

Investigation of MoO x /n-Si strong inversion layer interfaces via dopant-free heterocontact

Published:2017-05-22 Issue:7 Volume:11 Page:1700107
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Sun Teng¹,Wang Rongbin¹²,Liu Ruiyuan¹,Wu Chen¹,Zhong Yanan¹,Liu Yuqiang¹,Wang Yusheng¹,Han Yujie¹,Xia Zhouhui¹,Zou Yatao¹,Song Tao¹,Koch Norbert²³,Duhm Steffen¹,Sun Baoquan¹

Affiliation:

1. Institute of Functional Nano and Soft Materials (FUNSOM); Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P.R. China

2. Institut für Physik & IRIS Adlershof; Humboldt-Universität zu Berlin; 12489 Berlin Germany

3. Helmholtz-Zentrum Berlin für Materialien und Energie GmbH; 12489 Berlin Germany

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Key Laboratory of Remote Measuring and Control, Jiangsu Province

International Young Scientists

Priority Academic Program Development of Jiangsu Higher Education Institutions and Collaborative Innovation Center of Suzhou Nano Science and Technology

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference42 articles.

1. Efficient silicon solar cells with dopant-free asymmetric heterocontacts

2. Dopant-Free All-Back-Contact Si Nanohole Solar Cells Using MoOx and LiF Films

3. High-efficiency crystalline silicon solar cells: status and perspectives

4. Improved quantitative description of Auger recombination in crystalline silicon

5. Surface recombination velocity of highly dopedn‐type silicon

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