Poly-Si/SiOx/c-Si passivating contact with 738 mV implied open circuit voltage fabricated by hot-wire chemical vapor deposition-Reference-Cited by-同舟云学术

Poly-Si/SiOx/c-Si passivating contact with 738 mV implied open circuit voltage fabricated by hot-wire chemical vapor deposition

Published:2019-04-15 Issue:15 Volume:114 Page:153901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Shenghao¹²^ORCID,Pomaska Manuel¹^ORCID,Hoß Jan³,Lossen Jan³,Pennartz Frank¹,Nuys Maurice¹,Hong Ruijiang²,Schmalen Andreas¹,Wolff Johannes¹,Finger Friedhelm¹,Rau Uwe¹^ORCID,Ding Kaining¹

Affiliation:

1. IEK-5 Photovoltaik, Forschungszentrum Jülich, Leo-Brandt Straße, 52425 Jülich, Germany

2. Institute for Solar Energy Systems, Guangdong Provincial Key Laboratory of Photovoltaic Technology, Sun Yat-sen University, 510006 Guangzhou, China

3. International Solar Energy Research Center – ISC Konstanz, Rudolf-Diesel Straße 15, 78467 Konstanz, Germany

Funder

German Federal Ministry of Economic Affairs and Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5089650

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1. Carrier-selective contacts for Si solar cells

2. Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells