An influence of the local strain on cathodoluminescence of GaN/AlxGa1−xN nanowire structures-Reference-Cited by-同舟云学术

An influence of the local strain on cathodoluminescence of GaN/AlxGa1−xN nanowire structures

Published:2016-11-21 Issue:19 Volume:120 Page:194304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Reszka Anna¹,Wierzbicka Aleksandra¹,Sobczak Kamil¹^ORCID,Jahn Uwe²,Zeimer Ute³,Kuchuk Andrian V.⁴⁵^ORCID,Pieniążek Agnieszka¹,Sobanska Marta¹,Klosek Kamil¹,Zytkiewicz Zbigniew R.¹,Kowalski Bogdan J.¹

Affiliation:

1. Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland

2. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin, Germany

3. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D-12489 Berlin, Germany

4. Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Fayetteville, Arkansas 72701, USA

5. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680 Kyiv, Ukraine

Funder

European Commission (EC)

Narodowe Centrum Nauki (NCN)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4968004

Reference28 articles.

1. Luminescence properties of defects in GaN

2. The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements

3. Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

4. Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials

5. ColumnarAlGaN/GaNNanocavities withAlN/GaNBragg Reflectors Grown by Molecular Beam Epitaxy on Si(111)

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