The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements-Reference-Cited by-同舟云学术

The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements

Published:2006-03-03 Issue:4 Volume:6 Page:704-708
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Thillosen Nicolas¹,Sebald Kathrin¹,Hardtdegen Hilde¹,Meijers Ralph¹,Calarco Raffaella¹,Montanari Simone¹,Kaluza Nicoleta¹,Gutowski Jürgen¹,Lüth Hans¹

Affiliation:

1. Institute of Thin Films and Interfaces (ISG1), CNI (Center of Nanoelectronic Systems for Information Technology), Research Center Jülich, 52425 Jülich, Germany, and Institute of Solid State Physics, University of Bremen, P.O. Box 330440, D-28334 Bremen, Germany

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl052456q

Reference24 articles.

1. A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

2. Gallium Nitride Nanowire Nanodevices

3. Catalytic Growth and Characterization of Gallium Nitride Nanowires

4. Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy

5. Growth of GaN nanowires by direct reaction of Ga with NH3

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