Graphene-Based Transparent Conducting Substrates for GaN/AlGaN Nanocolumn Flip-Chip Ultraviolet Light-Emitting Diodes-Reference-Cited by-同舟云学术

Graphene-Based Transparent Conducting Substrates for GaN/AlGaN Nanocolumn Flip-Chip Ultraviolet Light-Emitting Diodes

Published:2021-08-18 Issue:9 Volume:4 Page:9653-9664
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Liudi Mulyo Andreas¹²^ORCID,Mukherjee Anjan¹,Høiaas Ida Marie¹,Ahtapodov Lyubomir¹,Nilsen Tron Arne¹,Toftevaag Håvard Hem¹,Vullum Per Erik³⁴,Kishino Katsumi²⁵,Weman Helge¹^ORCID,Fimland Bjørn-Ove¹

Affiliation:

1. Department of Electronic Systems, Norwegian University of Science and Technology (NTNU), Trondheim NO-7491, Norway

2. Department of Engineering and Applied Sciences, Sophia University, Tokyo 102-8554, Japan

3. SINTEF Industry, Trondheim NO-7465, Norway

4. Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim NO-7491, Norway

5. Sophia Nanotechnology Research Center, Sophia University, Tokyo 102-8554, Japan

Funder

Norges Forskningsr??d

Ministry of Education, Culture, Sports, Science and Technology

Norges Teknisk-Naturvitenskapelige Universitet

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.1c02050

Reference73 articles.

1. A III-nitride nanowire solar cell fabricated using a hybrid coaxial and uniaxial InGaN/GaN multi quantum well nanostructure

2. Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells

3. An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer

4. GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

5. a-Axis GaN/AlN/AlGaN Core–Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors

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