a-Axis GaN/AlN/AlGaN Core–Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors-Reference-Cited by-同舟云学术

a-Axis GaN/AlN/AlGaN Core–Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors

Published:2017-11-15 Issue:47 Volume:9 Page:41435-41442
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Song Weidong¹,Wang Rupeng¹,Wang Xingfu¹,Guo Dexiao¹,Chen Hang¹,Zhu Yuntao¹,Liu Liu¹,Zhou Yu²,Sun Qian²,Wang Li³,Li Shuti¹^ORCID

Affiliation:

1. Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, South China Normal University, Guangzhou 510631, P. R. China

2. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China

3. School of Materials Science and Engineering, Nanchang University, Nanchang 330031, P. R. China

Funder

Ministry of Education of the People's Republic of China

National Natural Science Foundation of China

Guangzhou City

Guangdong Province

Graduate School, South China Normal University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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