Time-Periodic Markers Revealing the Growth Mechanism of GaN Nanowires by Si-Assisted MOVPE-Reference-Cited by-同舟云学术

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Time-Periodic Markers Revealing the Growth Mechanism of GaN Nanowires by Si-Assisted MOVPE

Published:2024-07-30 Issue:15 Volume:24 Page:6373-6380
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Bosch Julien¹^ORCID,Vennéguès Philippe¹,Coulon Pierre-Marie¹,Shields Philip A.²^ORCID,Zúñiga-Pérez Jesus¹³^ORCID,Tchernycheva Maria⁴^ORCID,Durand Christophe⁵^ORCID,Alloing Blandine¹

Affiliation:

1. Université Côte d’Azur, CNRS, CRHEA, Sophia Antipolis, Valbonne 06560, France

2. University of Bath, Claverton Down, Bath BA2 7AY, U.K.

3. MajuLab, International Research Laboratory IRL 3654, CNRS, Université Côte d’Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, Singapore 117543, Singapore

4. C2N, Université Paris-Saclay, Palaiseau 91120, France

5. Université Grenoble Alpes, Grenoble-INP, CEA, IRIG, PHELIQS, CEA, Grenoble 38000, France

Funder

LabEx GANEX

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00615

Reference21 articles.

1. Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires

2. Single-mode GaN nanowire lasers

3. Fabrication strategies of flexible light sources based on micro/nano III-nitride LEDs

4. a-Axis GaN/AlN/AlGaN Core–Shell Heterojunction Microwires as Normally Off High Electron Mobility Transistors

5. Surface Passivation of GaN Nanowires for Enhanced Photoelectrochemical Water-Splitting

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