Analytical electron microscopy of Al/TiN contacts on silicon for applications to very large scale integrated devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338837
Reference22 articles.
1. High‐temperature contact structures for silicon semiconductor devices
2. Diffusion barriers in layered contact structures
3. TiN formed by evaporation as a diffusion barrier between Al and Si
4. Interfacial reactions between aluminum and transition‐metal nitride and carbide films
5. The use of titanium-based contact barrier layers in silicon technology
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