Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors-Reference-Cited by-同舟云学术

Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors

Published:2016-09-15 Issue:38 Volume:8 Page:25631-25636
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kryvchenkova Olga¹,Abdullah Isam²,Macdonald John Emyr²,Elliott Martin²,Anthopoulos Thomas D.³,Lin Yen-Hung³,Igić Petar¹,Kalna Karol¹,Cobley Richard J.¹

Affiliation:

1. Electronic Systems Design Centre, Swansea University, Swansea SA1 8EN, U.K.

2. School of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF24 3AA, U.K.

3. Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, U.K.

Funder

Engineering and Physical Sciences Research Council

European Research Council

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

http://pubs.acs.org/doi/pdf/10.1021/acsami.6b10332

Reference41 articles.

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5. Scanning Kelvin probe and photoemission electron microscopy of organic source-drain structures

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