High precision of sign language recognition based on In2O3 transistors gated by AlLiO solid electrolyte

Abstract

Abstract In recent years, the synaptic properties of transistors have been extensively studied. Compared with liquid or organic material-based transistors, inorganic solid electrolyte-gated transistors have the advantage of better chemical stability. This study uses a simple, low-cost solution technology to prepare In2O3 transistors gated by AlLiO solid electrolyte. The electrochemical performance of the device is achieved by forming a double electric layer and electrochemical doping, which can mimic basic functions of biological synapses, such as excitatory postsynaptic current, paired-pulse promotion, and spiking time-dependent plasticity. Furthermore, complex synaptic behaviors such as Pavlovian classical conditioning is successfully emulated. With a 95% identification accuracy, an artificial neural network based on transistors is built to recognize sign language and enable sign language interpretation. Additionally, the handwriting digit’s identification accuracy is 94%. Even with various levels of Gaussian noise, the recognition rate is still above 84%. The above findings demonstrate the potential of In2O3/AlLiO TFT in shaping the next generation of artificial intelligence.