Model for InGaP/GaAs/InGaP double heterojunction bipolar transistor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1343888
Reference11 articles.
1. Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base
2. Effect of collector design on the d.c. characteristics of heterojunction bipolar transistors
3. 1.5-W CW S-band GaInP/GaAs/GaInP double heterojunction bipolar transistor
4. InGaP/GaAs based single and double heterojunction bipolar transistors grown by MOMBE
5. Characterisation of GaInP/GaAs double heterojunction bipolar transistors with different collector designs
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. An analytical study of current-voltage characteristics and breakdown performance of GaInP∕GaAs composite collector double heterojunction bipolar transistor;Journal of Applied Physics;2004-10-15
2. Analytical investigation of dead space effect under near-breakdown conditions in GaInP/GaAs composite double heterojunction bipolar transistors;Microelectronics Reliability;2004-07
3. InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor with high breakdown, low offset, and knee voltage;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
4. Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistor;Journal of Applied Physics;2003-01
5. Analysis of collector-emitter offset voltage of InGaP/GaAs composite collector double heterojunction bipolar transistor;Journal of Applied Physics;2002-04
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