Solid phase doping of silicon with boron by surface scanning with cw CO2laser radiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98962
Reference14 articles.
1. Silicon solar cells realized by laser induced diffusion of vacuum‐deposited dopants
2. Ion implantation in Si using a high‐density CO2laser‐produced boron plasma flux
3. Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beam
4. CW CO<formula><inf><roman>2 </roman></inf></formula>Laser Annealing
5. Annealing of Implanted Silicon under the Action of Microsecond Pulsed TEA-CO2 Laser Radiation
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Alloying of a thin Al layer with p-Si under laser irradiation;Semiconductor Science and Technology;1998-11-01
2. Doping of p‐type shallow junctions using electron beam evaporation of boron layers for compatibility with complementary‐metal‐oxide‐semiconductor technology;Applied Physics Letters;1995-01-02
3. One-step surface implantation and reaction by laser irradiation of multistructures deposited on Si and Ge samples;Vacuum;1990-01
4. Laser solid-phase doping of semiconductors;Applied Surface Science;1989-12
5. Enhanced Interdiffusion Effects in Compound Semiconductors;MRS Proceedings;1987
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