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Laser solid-phase doping of semiconductors

  • Published:1989-12 Issue:1-4 Volume:43 Page:340-345
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Prokhorov A.M.,Bonchik A.Yu.,Kiyak S.G.,Manenkov A.A.,Mikhailova G.N.,Pokhmurskaja A.V.,Seferov A.S.,Ursu I.,Craciun V.,Mihailescu I.N.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of CdTe-based p-n junction-diode x/y-ray detectors formed by frontside laser irradiation;Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIV;2022-10-04

2. Comparative study of In/CdTe/Au Schottky- and p–n junction-diode detectors formed by backside laser irradiation doping;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2021-01

3. Pulsed laser deposition of indium on the CdTe crystal surface for contact formation;Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XX;2018-09-13

4. Laser Assited Doping for Photovoltaic Applications;Journal of Laser Micro/Nanoengineering;2009-08

5. Interface Dynamics of Melt Instabilities on Semiconductor Surface;Solid State Phenomena;2007-11
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