Abstract
ABSTRACTThis paper reviews the principal processes involved in the enhanced interdiffusion of elements across interfaces between two III-V compound semiconductors. Implantation enhanced interdiffusion effects in GaAs-Gal−xAlxAs are compared for single Quantum Well structures and Superlattice structures. Measurements indicate a marked difference in the annealing and enhanced interdiffusion kinetics between these 2 types of structures.
Publisher
Springer Science and Business Media LLC
Cited by
2 articles.
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