Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1554484
Reference11 articles.
1. Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors
2. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
3. Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope
4. Thin anodic oxides formed on GaAs in aqueous solutions
5. Photo-assisted anodic etching of GaN films in NaOH electrolyte with Cl ions
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