Local defect-enhanced anodic oxidation of reformed GaN nanowires-Reference-Cited by-同舟云学术

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Local defect-enhanced anodic oxidation of reformed GaN nanowires

Published:2020-07-07 Issue:7 Volume:4 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Colvin Jovana^ORCID,Ciechonski Rafal,Gustafsson Anders^ORCID,Samuelson Lars,Ohlsson B. Jonas,Timm Rainer^ORCID

Funder

Vetenskapsrådet

Stiftelsen för Strategisk Forskning

Knut och Alice Wallenbergs Stiftelse

Crafoordska Stiftelsen

Energimyndigheten

Vinnova innovation agency

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.4.074603/fulltext

Reference30 articles.

1. Defect structure in selectively grown GaN films with low threading dislocation density

2. Dislocation reduction in GaN thin films via lateral overgrowth from trenches

3. Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique

4. Surface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays

5. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

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