Evidence of enhanced epitaxial crystallization at low temperature by inelastic electronic scattering of mega-electron-volt heavy-ion-beam irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference29 articles.
1. Mechanism of low-temperature (≤300 °C) crystallization and amorphization for the amorphous Si layer on the crystalline Si substrate by high-energy heavy-ion beam irradiation
2. A defect model for ion-induced crystallization and amorphization
3. Ion-beam-induced epitaxial crystallization and amorphization in silicon
4. Phenomenological description of ion-beam-induced epitaxial crystallization of amorphous silicon
5. Role of Electronic Processes in Epitaxial Recrystallization of Amorphous Semiconductors
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