Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3700224
Reference32 articles.
1. Manufacturable Processes for $\leq$ 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances
2. Advanced Source/Drain Engineering for MOSFETs: Schottky Barrier Height Tuning for Contact Resistance Reduction
3. Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
4. Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime
5. Schottky Barrier Height of Erbium Silicide on $ \hbox{Si}_{1 - x}\hbox{C}_{x}$
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