The influence of nitrogen incorporation on performance and bias temperature instability of metal oxide semiconductor field effect transistors with ultrathin high-k gate stacks-Reference-Cited by-同舟云学术

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The influence of nitrogen incorporation on performance and bias temperature instability of metal oxide semiconductor field effect transistors with ultrathin high-k gate stacks

Published:2008-11-10 Issue:19 Volume:93 Page:193506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liao J. C.,Fang Y. K.,Chen C. H.,Hou Y. T.,Hsu P. F.,Lin K. C.,Huang K. T.,Lee T. L.,Liang M. S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3025420

Reference12 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Symposium on VLSI Technology;Choi C.,2004

3. Optimized NH<tex>$_3$</tex>Annealing Process for High-Quality HfSiON Gate Oxide

4. Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

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2. Influence of NH 3 annealing on the chemical states of HfO 2 /Al 2 O 3 stacks studied by X-ray photoelectron spectroscopy;Vacuum;2016-02

3. Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-kMetal–Oxide–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2010-07-20

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