Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-kMetal–Oxide–Semiconductor Field-Effect Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference10 articles.
1. Charge trapping and detrapping characteristics in hafnium silicate gate stack under static and dynamic stress
2. Design tradeoffs between surface and buried-channel FET's
3. On the channel-length dependence of the hot-carrier degradation of n-channel MOSFETs
4. Validity of constant voltage stress based reliability assessment of high-/spl kappa/ devices
5. Review on high-k dielectrics reliability issues
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Particle filter approach to lifetime prediction for microelectronic devices and systems with multiple failure mechanisms;Microelectronics Reliability;2015-08
2. Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses;Applied Physics Letters;2013-10-28
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